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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Bulletin I25183/B
ST103S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
105A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST103S
105 85 165 3000 3150 45 41 400 to 800 10 to 25 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
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ST103S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V
ST103S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM /I RRM max.
@ TJ = TJ max.
mA
30
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 280 310 320 340 50 V DRM 50 60
o
ITM 180 el 180 200 200 210 50 50 85 440 470 480 490 50 V DRM 60
o
ITM 100s 330 300 310 320 50 85 4730 2500 1530 840 50 V DRM 60
ITM
Units
3630 1850 1090 580 50 85 V A/s C A
22 / 0.15F
22 / 0.15F
22 / 0.15F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST103S
105 85 165 3000 3150 2530 2650
Units
A C
Conditions
180 conduction, half sine wave
DC @ 76C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I2 t
Maximum I2t for fusing
45 41 32 29
I 2 t
Maximum I2t for fusing
450
t = 0.1 to 10ms, no voltage reapplied
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ST103S Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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ST103S Series
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
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ST103S Series
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
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ST103S Series
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
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ST103S Series
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST103S
1.73 1.32 1.35 1.40
Units
Conditions
ITM= 300A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x x IT(AV)), TJ = TJ max.
Low level value of forward slope resistance
m 1.30 600 1000 mA
r
t2
IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST103S
1000 0.80 Min 10 Max 25
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
p
Typical delay time
s
Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/s VR = 50V, t = 200s, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST103S
500 30
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST103S
40 5 5 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, t 5ms
p
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST103S Series
Thermal and Mechanical Specifications
Parameter
TJ T
stg
ST103S
-40 to 125 -40 to 150 0.195 0.08 15.5 (137) 14 (120)
Units
C
Conditions
Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
RthJC RthCS T
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
130
TO-209AC (TO-94)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
0.034 0.040 0.052 0.076 0.126
Rectangular conduction Units
0.025 0.042 0.056 0.079 0.127 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
10
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud Base 1/2" 20UNF - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 20 50 100 200 FN * FM FL * FP FK -400 -HM HL HP HK HJ 10 CN DN EN 12 CM DM EM 15 CL DL EL t (s) q 18 CP DP EP 20 CK DK EK 25 ---*Standard part number. All other types available only on request.
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
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ST103S Series
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
M IN (0 .3 9 .5 7)
8.5 (0.33) DIA. 4.3 (0.17) DIA
2.6 (0.10) MAX.
RED SILICON RUBBER 1 57 (6.1 8) 170 (6.69 ) RED CATHODE
C.S. 0.4 mm (.0006 s.i.)
2
C.S. 16mm (.025 s.i.)
20
2
(0.
FLEXIBLE LEAD
79
)M
IN
.
.
Fast-on Terminals AMP. 280000-1 REF-250
10 (0.39)
WHITE GATE
215 (8.46) 70 (2.75) MIN . RED SHRINK 29 (1 .14) M AX. WHITE SHRINK
22.5 (0.88) MAX. DIA. 12.5 (0.4 9) M A X .
2 1 ( 0.83 )
M AX.
SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 ( 0 .3 9 ) 5.2 (0.20) DIA.
4 6 ( 1 .8 1 )
4 9 ( 1 .9 3 )
7.5 (0.30)
1 2 .5 (0 .4 9 )
2 1 ( 0 .8 3 )
M AX .
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
M A X.
1/2"-20UNF-2A
S W 27
2 9 (1 . 1 4 ) M A X .
2.4 (0.09) 29.5 (1.16)
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( 0 .6 5 )
1 6 .5
10 ( 0 .3 9 )

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